CETC Solar PV Product
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Polycrystalline Silicon Wafer
- Introduction
- Feature
- Parameters
- Application scope
CETC48 has a solar wafer capacity of 400MW. The production line is built with self-developed saw machine. By employing diamond wire cutting process, the productivity is improved and the cost is largely reduced. With self-developed high efficiency polycrystalline manufacturing technology, the solar wafer is optimized in micro structure, and its dislocation, stacking fault and other crystal defects have been effectively controlled. Therefore, it can achieve a lower carbon, oxygen and metal impurity concentration, longer minority carrier lifetime and more uniform doping distribution.
Conductivity type
P
Dimension
156×156±0.5mm
Diagonal length
219±0.5mm
Chamfer size
1.5 ± 0.5mm
Thickness
200±20μm
Angle between adjacent sides
90°±0.1°
Resistivity
1.0–3.0Ω·cm
Minority carrier lifetime
≥1.5μs
Oxygen concentration
<8×1017 atoms/cm3
Carbon concentration
<5×1017 atoms/cm3
Metal impurity concentration
Fe, Cr, Ni, Cu, Zn
TMI: ≤1x10-6 ppmw
Boron concentration
≤0.30ppmw
ADVISORY MESSAGEA
