Plasma etching (ICP) refers to the use of gas that can react with the etched material, through glow discharge to form a low-temperature plasma, to corrosion the unshielded part of the sample surface.It is etched by chemical reaction of active ion and substrate.It belongs to dry etching equipment.

Compact structure and small floor area;
Dense small holes spray air supply, large etching range;
It has manual / automatic operation mode, convenient and flexible.

1) Applicable chip size: 4 "～ 8";
2) Etching minimum linewidth: 1 μ M
3) Uniformity: ± 5% (in tablets), ± 3% (between batches)
4) Substrate cooling: water cooling

It is used for polishing the substrate surface or material removal, especially for fast etching of non-metallic materials and oxide films, such as polysilicon, SiO2, Si3N4, etc.