Ion beam etching is based on the sputtering principle, using the ion beam from the ion source to directly bombard the workpiece, sputtering out some materials on the workpiece that are not covered by the mask, so as to achieve the purpose of material removal.Ion beam etching is a pure physical etching process, which has the characteristics of the highest resolution and the best steepness in various conventional etching methods.

·"In line" works continuously;
·Suitable for a wide range of substrates, compatible with irregular substrates;
·Magnetic control target with independent intellectual property, good uniformity of dust film and high utilization rate of target material
·With "target lifetime" recording function
·Equipped with BBQ and cleaning functions

Base plate size: ≮ 400 * 400mm
Vacuum system: molecular pump system / cryopump system
Uniformity of film thickness: ≤ 5%
·Scanning speed: 50-200mm / S

It is used for polishing the substrate surface or material removal, especially for etching of metal material film, such as Cu, Au, Pt, Ti, Ni, NiCr, etc