Ion beam etching is based on the sputtering principle, using the ion beam from the ion source to directly bombard the workpiece, sputtering out some materials on the workpiece that are not covered by the mask, so as to achieve the purpose of material removal.Ion beam etching is a pure physical etching process, which has the characteristics of the highest resolution and the best steepness in various conventional etching methods.

In horizontal etching mode, the substrate pollution is small and the ion source failure is small;
Stable and reliable large beam source, high etching rate;
Stable etching rate can bring stable uniformity;
Unique substrate low temperature control technology ensures substrate low temperature etching.

Batch capacity: 18 pieces / batch (2 ") or 6 pieces / batch (3");
Etching uniformity: within ± 5% and between ± 3%.

It is used for polishing the substrate surface or material removal, especially for etching of metal material film, such as Cu, Au, Pt, Ti, Ni, NiCr, etc