The low temperature hot pressing sintering furnace is used for discharging glue and sintering of LTCC substrate.The shrinkage of LTCC substrate is controlled by pressure assisted sintering, which can also be used for hot pressing sintering of other special materials.

·SiC indenter is adopted, the product is evenly pressed by heating, and the rubber is fully discharged
·Fast heating and cooling, high efficiency
·12 heaters are distributed in a ring, and the power ratio is separately adjustable
·Combination of sintering pressure and temperature curve

Maximum temperature: 1000 ℃
Temperature uniformity: ± 2 ℃ (850 ℃)
Heating rate: 50 ℃ / min
Maximum pressure range: 50kN
Pressure accuracy: ± 5%
Process steps: up to 100 process steps for each process procedure

Used for heat treatment of thick film circuit, thick film resistor, electronic component electrode, LTCC, steel heater, solar panel and other similar products.