With CETC48 own solar equipment R&D strength, CETC48 has upgraded the manufacturing facility to that of 680kg and 800kg high efficiency ingot casting technology, which can achieve a shorter production time (typically 70 hours for 810kg ingot) and lower power consumption (6 kwh/kgon average). Our crystal silicon ingot product has high efficiency, vertical orientation and uniform grain. The defect and dislocation density are largely reduced. The ingot can help improve the solar cell efficiency by 0.3% - 0.5% under the same cost, thus providing a feasible solution for cost reduction and efficiency improvement of crystalline silicon solar cell.

1. Material Properties
Crystal growth method: DSS
Type: P
Dopant: boron

2. Electrical Properties
Resistivity: 1 – 3 Ω•cm
Minority carrier lifetime: ≥ 6.5 μs
Oxygen content: ≤ 8 x 1017 atoms/cm3
Carbon content: ≤ 5 x 1017 atoms/cm3

3. Crystal Defects
Crack or hole: none

4. Geometry Properties
Brick diameter: 219.2 ± 0.4 mm
Brick side length: 156 ± 0.4 mm
Angle between adjacent sides: 90º ± 0.1º