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M5111-4WK/UM Diffusion Furnace is a kind of electronics manufacturing devices specially designed for industries of integrated circuit, microelectronics, crystalline silicon solar cell and power electronics, etc. The machine can be used for semiconductor manufacturing process like silicon wafer surface doping, oxidation, alloying, annealing and so on.
1. High process stability and uniformity proven by more than 500-stack applications.
2.Five-section fast-heating double-circuit temperature control system to achieve a temperature control precision of 0.1 °C.
3. Advanced pressure balancing system to reduce the process variation caused by air exhaust.
4. Automatic loading and unloading system and soft-landing boat conveyor.
5. Flexible furnace door sealing technology to achieve better sealing performance and thermal insulation effect.
Conductivity type |
P |
Dimension |
156×156±0.5mm |
Diagonal length |
219±0.5mm |
Chamfer size |
1.5 ± 0.5mm |
Thickness |
200±20μm |
Angle between adjacent sides |
90°±0.1° |
Resistivity |
1.0–3.0Ω·cm |
Minority carrier lifetime |
≥1.5μs |
Oxygen concentration |
<8×1017 atoms/cm3 |
Carbon concentration |
<5×1017 atoms/cm3 |
Metal impurity concentration |
Fe, Cr, Ni, Cu, Zn TMI: ≤1x10-6 ppmw |
Boron concentration |
≤0.30ppmw |
The diffusion furnace is a typical heat treatment equipment in semiconductor processing, which is used in the process of P doping, B doping, oxidation, alloy, annealing and so on.