CETC Silicon Carbide (SiC) Process Equipment
〈
〉
Ion beam sputtering deposition equipment
Patent design ion source
High film quality
High film quality
- Introduction
- Feature
- Parameters
- Application scope
The equipment is mainly used in the manufacture of microelectronic devices and the preparation of films of various materials in the scientific research of film materials, including the preparation of metal, semiconductor, alloy and compound films.Especially in the preparation of thin-film sensors, sensitive components and precise thin-film resistors, there are advantages that other devices can not compare.
- ·Ion beam energy, beam flow and other process parameters can be controlled independently to ensure the consistency and repeatability of the process.
·The target can be changed automatically, and the multilayer films of different materials can be deposited continuously without breaking the vacuum.
·Before coating, the substrate and target can be cleaned in situ by ion beam bombardment to obtain atomic clean surface. 
- Kaufman ion source:
0-1500ev (energy), beam current 1-150ma continuously adjustable;
2. Ion source outlet beam diameter:
Focus beam: φ 100mm
Parallel beam: φ 100mm
3. Sputtering target:
Four or three positions of a target, automatic rotation and transposition
4. Substrate table:
Disc carrier: φ 200mm, rotating movement, adjustable speed of 0-10rpm;
Substrate heating: RT ~ 200 ℃ ≤ 25 minutes, automatic control.
5. Film forming uniformity: ≤± 5% 
- Various kinds of metal, nonmetal, compound and other thin film materials are plated on the surface of flat substrate.Such as Al, Cu, Au, Pt, Ti, Ni, W, NiCr, TiW, SiO2, Al2O3, TiO2, ZnO, Tan, ITO and other thin films.It is suitable for optical film preparation, ohmic contact preparation and functional film material preparation.
ADVISORY MESSAGEA
