CETC Silicon Carbide (SiC) Process Equipment
〈
〉
Vertical high temperature sintering furnace
Temperature up to 2050 ℃
Including vacuum
Including vacuum
- Introduction
- Feature
- Parameters
- Application scope
The vertical tungsten mesh sintering furnace is a high-temperature sintering equipment for the manufacture of HTCC, AlN and other high-performance ceramic substrates, and it can also be used for the high-temperature sintering of other ceramic, metal and alloy materials.
- ·Vertical bell jar structure
·High control accuracy, high reliability, easy maintenance and long service life
·Hanging tungsten plate heating element, tungsten plate and electrode adopt embedded structure
·Three zone temperature control to effectively compensate the temperature uniformity in the working zone
·Create six phase balanced heating technology, improve heater life and reduce electromagnetic interference 
- Maximum temperature: 2050 ℃
Operating temperature range: 1200 ℃ ~ 2050 ℃
Temperature uniformity: ± 5 ℃ (empty furnace, 1850 ℃ constant temperature)
Temperature stability: ± 5 ℃ / 4H (empty furnace, 1850 ℃ constant temperature);
Temperature rise rate: 0 ~ 30 ℃ / min
Effective working area: φ 300mm × 600mm or φ 500mm × 800mm
Process gas: nitrogen, hydrogen or mixed gas
Limit vacuum degree: 5 × 10-3 PA (room temperature, empty, fully degassed) 
- High temperature sintering of AlN and other high performance ceramic substrates
ADVISORY MESSAGEA
